Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells

被引：9
|
作者：
Belykh, V. V. [1 ]
Kochiev, M. V. [1 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
来源：
PHYSICAL REVIEW B | 2015年 / 92卷 / 04期
基金：
俄罗斯科学基金会;
关键词：
BOSE-EINSTEIN CONDENSATION; ELECTRON-HOLE LIQUID; RAYLEIGH-SCATTERING; LIFETIMES; CARRIERS; GAS; PHOTOLUMINESCENCE; THERMALIZATION; DEPENDENCE; COHERENCE;
D O I：
10.1103/PhysRevB.92.045307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comprehensive experimental investigation of exciton and biexciton recombination in GaAs/AlGaAs quantum wells is presented. Exciton and biexciton recombination times are found to be 16 and 55 ps, respectively. A method of determining the dynamics of the exciton temperature is developed. It is shown that both exciton and biexciton recombination processes increase the exciton temperature by an amount as high as similar to 10 K. These processes impose a new restriction on the possibility of exciton Bose-Einstein condensation and make impossible its achievement in a system of direct excitons in GaAs quantum wells even for resonantly excited exciton gas.
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页数：8
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