A Thiazolothiazole-Based Semiconducting Polymer with Well-Balanced Hole and Electron Mobilities

被引：2
|
作者：
Saito, Masahiko [1 ]
Osaka, Itaru [1 ]
机构：
[1] Hiroshima Univ, Dept Appl Chem, 1-4-1 Kagamiyama, Higashihiroshima, Hiroshima 7398527, Japan
来源：
APPLIED SCIENCES-BASEL | 2019年 / 9卷 / 03期
关键词：
semiconducting polymer; thiazolothiazole; organic field-effect transistors; n-type; ambipolar; FIELD-EFFECT TRANSISTORS; COPOLYMER SEMICONDUCTORS; PERFORMANCE; EFFICIENCIES; ORIENTATION; NETWORK; IMPACT;
D O I：
10.3390/app9030451
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the synthesis and properties of a new thiazolothiazole (TzTz)-based semiconducting polymer incorporating the dithienothienothiophenebisimide (TBI) unit, named PTzTBI. PTzTBI showed relatively deep HOMO and LUMO energy levels of -5.48 and -3.20 eV, respectively. Although PTzTBI mainly formed face-on backbone orientation unfavorable for transistors, PTzTBI functioned as an ambipolar semiconductor for the first time with TzTz-based polymers, with reasonably high and well-balanced hole (0.02 cm(2)V(-1)s(-1)) and electron (0.01 cm(2) V(-1)s(-1)) mobilities.
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页数：7
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