Influence of the dopant concentration in In-doped SrTiO3 on the structural and transport properties

被引:11
|
作者
Fix, T. [1 ]
Bali, R. [1 ]
Stelmashenko, N. [1 ]
Blamire, M. G. [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
关键词
semiconductors; thin films; epitaxy;
D O I
10.1016/j.ssc.2008.03.019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
SrInxTi1-xO3 thin films are grown epitaxially on NdGaO3 (001) and characterized for x = 0, 0.005, 0.02, 0.1, 0.2, 0.5. While films with x = 0, 0.2 and 0.5 are insulating, the ones with x=0.005, 0.02 and 0.1 are semiconducting and show a p-type behaviour. Highly rectifying diodes composed of SrIn0.005Ti0.995O3 grown on SrNb0.02Ti0.98O3 thin films confirm this behavior. Therefore the use of In as a dopant in SrTiO3 is promising in the field of semiconductors. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:428 / 430
页数:3
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