Dual-state lasing and the case against the phonon bottleneck

被引:0
|
作者
Spencer, Peter [1 ]
Shi, Jie [1 ]
Clarke, Edmund [1 ]
Murray, Ray [1 ]
Majid, Mohammed [2 ]
Childs, David [2 ]
Alexander, Ryan [2 ]
Groom, Kristian [2 ]
Hogg, Richard [2 ]
机构
[1] Imperial Coll London, Blackett Lab, Dept Phys, Prince Consort Rd, London SW7 2BZ, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England
来源
基金
英国工程与自然科学研究理事会;
关键词
Quantum dots; III-V semiconductors; carrier dynamics; dual state lasing; QUANTUM; THRESHOLD; GAIN;
D O I
10.1117/12.845632
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Quantum Dot lasers exhibit the novel phenomenon of dual state lasing where population inversion can be achieved on two optical transitions within the dots. In principle this might occur if a phonon bottleneck exists to impede relaxation of carriers from the higher energy state. Here we present an alternative explanation whereby different lasing modes compete for carriers and are spatially separable. Evidence comes from a comparison of electrical and optical measurements made on the devices. The evolution of a particular lasing mode depends on diffusion of carriers between dots and we show how, using an equivalent circuit model, this is consistent with our measurements.
引用
收藏
页数:11
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