Design of RF integrated circuits using SiGe bipolar technology

被引：14
|
作者：
Gotzfried, R [1 ]
Beisswanger, F [1 ]
Gerlach, S [1 ]
机构：
[1] TEMIC Semicond, GmbH, D-74025 Heilbronn, Germany
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1998年 / 33卷 / 09期
关键词：
amplifier noise; bipolar integrated circuits; mobile communication; power amplifier; silicon-germanium; switches;
D O I：
10.1109/4.711341
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on design aspects and the implementation of radio-frequency integrated circuits using TEMIC's SiGe technology. The differences between the device parameters of silicon bipolar junction transistor and silicon germanium heterojunction bipolar transistor technology and their influence on IC design are discussed. Design and measurement results of RFIC's, including low noise amplifier, power amplifier, and single-pole, double-throw antenna switch for application in a 1.9 GHz digital enhanced cordless telecommunications RF front end are presented.
引用
收藏
页码：1417 / 1422
页数：6
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