Modeling of RF- MEMS BAW Resonator

被引：3

作者：

Roy, Ambarish ^{[1
]}

Barber, Bradley P. ^{[2
]}

Prasad, Kanti ^{[1
]}

机构：

[1] Univ Massachusetts, ECE Dept, Lowell, MA 01854 USA

[2] Acton, Lowell, MA 01720 USA

来源：

23RD INTERNATIONAL CONFERENCE ON VLSI DESIGN | 2010年

关键词：

THIN-FILM;

D O I：

10.1109/VLSI.Design.2010.32

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Due to the demand of smaller and more portable devices the applications of MEMS resonators are rapidly increasing Solidly Mounted Resonators (SMR) based on Bulk Acoustic Wave (BAW) technology follow MEMS principles to build high performance microwave filters for RF communication In this paper we will provide the architecture of SMRs by discussing the designing aspects of its core structures which are within foundry CMOS processes using RF design software Advanced Design System (ADS) Conventional VLSI processes are followed for the fabrication of the SMRs The results from the fabricated data are compared and discussed

引用

页码：170 / +

页数：2

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