ELNES;
First principles calculation;
Pseudopotential;
Lattice imperfection;
1ST-PRINCIPLES;
D O I:
10.1016/j.micron.2011.07.005
中图分类号:
TH742 [显微镜];
学科分类号:
摘要:
Theoretical calculations of electron energy loss near edge structures (ELNES) of lattice imperfections, particularly a Ni(1 1 1)/ZrO2(1 1 1) heterointerface and an Al2O3 stacking fault on the (1 (1) over bar 0 0) plane, are performed using a first principles pseudopotential method. The present calculation can qualitatively reproduce spectral features as well as chemical shifts in experiment by employing a special pseudopotential designed for the excited atom with a core-hole. From the calculation, spectral changes observed in O-K ELNES from a Ni/ZrO2 interface can be attributable to interfacial oxygen-Ni interactions. In the O-K ELNES of Al2O3 stacking faults, theoretical calculation suggests that the spectral feature reflects coordination environment and chemical bonding. Powerful combinations of ELNES with a pseudopotential method used to investigate the atomic and electronic structures of lattice imperfections are demonstrated. (C) 2011 Elsevier Ltd. All rights reserved.
机构:
Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
Mizoguchi, T.
Saitoh, M.
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机构:
Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
NEC Corp Ltd, Device Platforms Res Labs, Kanagawa 2291198, JapanUniv Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
Saitoh, M.
Ikuhara, Y.
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h-index: 0
机构:
Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, Aichi 4568587, JapanUniv Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan