The optimal bias current of microbolometer under self-heating effect

被引：0
|
作者：
Chen, Chao [1 ]
Zhang, Long [1 ]
Jiang, Ya Dong [1 ]
Wang, Tao [1 ]
机构：
[1] Univ Elect Sci & Technol China, Key Lab Elect Thin Films & Integrated Devices, Chengdu, Si Chuan, Peoples R China
来源：
2014 6TH INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE AND COMMUNICATION NETWORKS | 2014年
关键词：
three-level model; microbolometer; thermal time constant; finite element simulation; thermoelectric coupling; effective thermal conductance; the optimal bias current; INFRARED DETECTORS;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a three-level model of microbolometer was established by intellisuit software. The total heat capacity, resistance and device thermal conductance Gdev(lower limit) was obtained by theoretical calculation, resistance extraction and dynamic thermal finite element simulation respectively. According to the relationship among of the bias current, effective thermal conductance and device thermal conductance, the range of current is got. Different current and the same amount of heat radiation were loaded on the devices for dynamic thermoelectric coupling finite element simulation. Considering the thermal time constant, effective thermal conductance and power consumption, the optimal current can be drawn.
引用
收藏
页码：116 / 121
页数：6
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