Investigation of room temperature ferromagnetism of 3C-SiC by vanadium carbide doping

被引：16
|
作者：
Wang, Hui [1 ,2 ]
Yan, Cheng-Feng [1 ]
Kong, Hai-Kuan [1 ]
Chen, Jian-Jun [1 ]
Xin, Jun [1 ]
Shi, Er-Wei [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期
基金：
中国国家自然科学基金;
关键词：
GLASSY FERROMAGNETISM;
D O I：
10.1063/1.4756939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Undoped and vanadium carbide (VC) doped 3C-SiC powders have been prepared, and an in-depth study is performed on the VC-doping dependence of room temperature ferromagnetism (FM). It is demonstrated that the FM originates in vacancy defects. The saturation magnetization (M-s) of VC is about 800 times than that of undoped 3C-SiC, while the M-s of VC-doped 3C-SiC is even smaller than that of the undoped one. The increase of doping concentration would result in the decrease of vacancy concentration and the increase of carrier concentration, suggesting that the FM of 3C-SiC is related to both vacancy and carrier concentrations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756939]
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页数：4
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