Focused ion beam implantation for gain coupled 1.55 μm DFB-laser diodes with improved device characteristics

被引：0

作者：

Konig, H ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

Gentner, JL ^{[1
]}

Goldstein, L ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laterally gain coupled DFB lasers were fabricated by focused ion beam implantation with a new technological approach. On complete InGaAsP/InP laser structures ridge waveguides were defined and first order gratings were implanted laterally to the ridges. The subsequent rapid thermal annealing results in a periodic bandgap modulation by implantation induced intermixing and gives rise to a strong modulation of the absorption. An electromagnetic wave propagating along the ridge waveguide couples with the lateral grating which leads to single mode DFB emission. Simultaneously the increased bandgap reduces the overall absorption and improves the lateral carrier confinement which results in better laser performance compared to not implanted lasers.

引用

页码：789 / 792

页数：4

共 22 条

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Wang, YC
Chen, GF
Wang, XH
SEMICONDUCTOR LASERS III, 1998, 3547 : 4 - 7
[2] A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams
Hofling, E
Orth, A
Reithmaier, JP
Forchel, A
15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, : 89 - 90
[3] 1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device
Luo, Yi
Wen, Guopeng
Sun, Changzheng
Li, Tongning
Yang, Xinmin
Wang, Renfan
Wang, Cailing
Jin, Jinyan
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (07): : 557 - 560
[4] Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography
Bach, L
Rennon, S
Reithmaier, JP
Forchel, A
Gentner, JL
Goldstein, L
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (08) : 1037 - 1039
[5] NEW COMPLEX-COUPLED DFB-LASER WITH A CONTACTED SURFACE GRATING FOR LAMBDA=1.55-MU-M
RAST, A
JOHANNES, TW
HARTH, W
FRANZ, G
IEE PROCEEDINGS-OPTOELECTRONICS, 1995, 142 (03): : 162 - 164
[6] First order gain-coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation
Orth, A
Reithmaier, JP
Zeh, R
Doleschel, H
Forchel, A
APPLIED PHYSICS LETTERS, 1996, 69 (13) : 1906 - 1908
[7] 1.55 μm single mode lasers with complex coupled distributed feedback gratings fabricated by focused ion beam implantation
König, H
Rennon, S
Reithmaier, JP
Forchel, A
Gentner, JL
Goldstein, L
APPLIED PHYSICS LETTERS, 1999, 75 (11) : 1491 - 1493
[8] Complex coupled 1.55 μm DFB-lasers based on focused ion beam enhanced wet chemical etching and quantum well intermixing
Koenig, H.
Rennon, S.
Reithmaier, J.P.
Forchel, A.
Gentner, J.-L.
Goldstein, L.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1999, : 29 - 32
[9] Complex coupled 1.55 µm DFB-lasers based on focused ion beam enhanced wet chemical etching and quantum well intermixing
Koenig, H.
Rennon, S.
Reithmaier, J.P.
Forchel, A.
Gentner, J.-L.
Goldstein, L.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, : 29 - 32
[10] 1.55 μm single-mode lasers with combined gain coupling and lateral carrier confinement by focused ion-beam implantation
Konig, H
Reithmaier, JP
Forchel, A
Gentner, JL
Goldstein, L
APPLIED PHYSICS LETTERS, 1998, 73 (19) : 2703 - 2705

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