3D Numerical Analysis of As-diffused HgCdTe Planar Pixel Arrays

被引:2
|
作者
Keasler, Craig A. [1 ]
Moresco, Michele [1 ]
D'Orsogna, Danilo [1 ]
Lamarre, Phil [2 ]
Bellotti, Enrico [1 ]
机构
[1] Boston Univ, Dept Elect & Comp Engn, 8 St Marys St, Boston, MA 02215 USA
[2] Photronix Inc, Burlington, MA 01803 USA
来源
DETECTORS AND IMAGING DEVICES: INFRARED, FOCAL PLANE, SINGLE PHOTON | 2010年 / 7780卷
关键词
Infrared detectors; HgCdTe; photovoltaic detector; pixel arrays; INFRARED DETECTORS;
D O I
10.1117/12.861107
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper we present a full three-dimensional numerical simulation of Arsenic-diffused HgCdTe based planar pixel arrays intended for detection in the medium-and long-wavelength infrared spectral range. As-diffused planar detector array structures, as opposed to mesa-type structures, do not require any etching processing that causes surface damages and consequently may lead to detector arrays with higher performance than the mesa type. Because of the interest in high performance planar infrared focal plane arrays, it is critical to develop numerical simulation models useful to predict the array's performance before they are fabricated. The goal of this work is to study the dependence of the quantum efficiency and the pixel-to-pixel cross talk on the geometrical and material parameters.
引用
收藏
页数:6
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