Failure Localization on the Open Circuit for a High Density Ceramic Flip-Chip Package after Reliability Test

被引:0
|
作者
Li Han [1 ]
Zheng Hongyu [2 ]
Zhang Xiaojun [1 ]
机构
[1] CETC, Res Inst 13, Shijiazhuang, Hebei, Peoples R China
[2] CETC, Beijing, Peoples R China
关键词
flip-chip; failure analysis; X-ray; SAM; SEM&EDS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ceramic is widely used in high reliability microelectronic packaging as its excellent properties. Generally, failure analysis for ceramic flip-chip structure is more difficult than other traditional types considering its special structure. Interconnection open failures of a flip-chip device in reliability testing were studied, and a test scheme from NDE to DPA was developed. The possibility of internal failure of the substrate was eliminated through TDR test. The failure position was preliminarily determined by X-ray, SAM and optical microanalysis. And finally, the nickel layer was found to be the accurate failure position of the device which was realized through SEM&EDS. The failure analysis method can be used for reference for failure detection and analysis of other ceramic flip-chip packages.
引用
收藏
页码:247 / 251
页数:5
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