Epitaxial Growth of Chalcopyrite-Type CuInS2 Films on GaAs(001) Substrates by Evaporation Method with Elemental Sources

被引：5

作者：

Tsuboi, Nozomu ^{[1
,2
]}

Tamogami, Takashi ^{[3
]}

Kobayashi, Satoshi ^{[1
]}

机构：

[1] Niigata Univ, Fac Engn, Niigata 9502181, Japan

[2] Niigata Univ, Ctr Transdisciplinary Res, Niigata 9502181, Japan

[3] Niigata Univ, Grad Sch Sci & Technol, Niigata 9502181, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

基金：

日本学术振兴会;

关键词：

3-SOURCE EVAPORATION; THIN-FILMS; LUMINESCENCE; STABILITY; EMISSION; GAP(001);

D O I：

10.1143/JJAP.50.05FB03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural properties of epitaxial CuInS2 thin films with various [Cu]/[In] ratios grown on GaAs(001) by the co-evaporation method with three element-sources are reported in comparison to those of the films on GaP(001). For the In-rich and almost stoichiometric films, the CuIn5S8 phase and metastable CuAu-type ordering of the CuInS2 phase were exhibited. The Cu-rich films had sphalerite-type ordering of the CuInS2 phase. The slightly Cu-rich films had the c-axis oriented chalcopyrite-type CuInS2 structure with traces of the CuAu-type ordering and twins. Taking account of the fact that the slightly Cu-rich films on GaP had only the c-axis oriented chalcopyrite-type structure, the traces are considered to be due to the larger lattice mismatch for GaAs than for GaP. Broad photoluminescence emission bands in the band-edge region of the films, which could be related to shallow levels, were observed at low temperature. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 50 条

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Faculty of Engineering, Niigata University, Niigata 950-2181, Japan
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