Electrically active defects in HgCdTe and opto-electronic properties of focal plane array by laser beam induced current

被引：0

作者：

Mao, WY ^{[1
]}

Sun, Q ^{[1
]}

Chu, JH ^{[1
]}

Zhao, J ^{[1
]}

Wang, LM ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2001年 / 20卷 / 04期

关键词：

infrared focal plane arrays; P-N junction; laser beam induced current;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-resolution and nondestructive optical characterization technique called laser beam-induced current (LBIC) was utilized to detect electrically active defects in HgCdTe wafers. It was also used to study the optoelectronic properties in photovoltaic detector elements for focal plane array without the requirement of any electrical contacts to individual detector elements. The LBIC was detected in HgCdTc wafers. The periodic distribution of LBIC was observed in photovoltaic detector with P-N junction array. The uniformity for the performance of the diodes in an array can then be assessed by examining qualitatively the LBIC image and by analyzing quantitatively the profile of LBIC signal corresponding to individual diodes.

引用

页码：259 / 262

页数：4