W-Band Pulsed Radar Receiver in Low Cost CMOS

被引：0

作者：

Zhang, Ning ^{[1
]}

Kenneth, K. O. ^{[1
]}

机构：

[1] Univ Florida, Dept Elec & Comp Eng, Silicon Microwave Integrated Circuits Res Grp SIM, Gainesville, FL 32611 USA

来源：

IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010 | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS heterodyne receiver integrating a phase-locked loop that includes a bulk of transmitter functions for W-band pulsed radar is realized using low leakage transistors of a low cost 65-nm bulk CMOS process with 5 thin and 1 thick metal layers used to manufacture cell phone RFIC's. The peak conversion gain of receiver is 7 dB and the minimum NF is 10.8 dB between 78 and 88 GHz in measurement. The entire receiver front-end consumes similar to 190 mW.

引用

页数：4

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