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- [1] Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process 2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 9 - 11
- [2] Design of a 240-GHz LNA in 0.13 μm SiGe BiCMOS Technology 2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 17 - 20
- [5] 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 μm SiGe BiCMOS Technology 2016 GERMAN MICROWAVE CONFERENCE (GEMIC), 2016, : 341 - 344
- [7] A 240 GHz Direct Conversion IQ Receiver in 0.13 μm SiGe BiCMOS Technology 2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 305 - 308
- [9] 240 GHz RF-MEMS Switch in a 0.13 μm SiGe BiCMOS Technology 2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 54 - 57
- [10] A 150GHz fT/fmax 0.13μm SiGe:C BiCMOS technology PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2003, : 199 - 202