Effect of dislocation arrays in crystals on relaxation of local stresses caused by structural inhomogeneity

被引：0
|
作者：
Tsvetkov, EG [1 ]
Rylov, GM [1 ]
Yurkin, AM [1 ]
机构：
[1] Russian Acad Sci, Inst Mineral & Petrog, Siberian Div, Novosibirsk, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 1999年 / 44卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The main types of structural inhomogeneities in high-temperature crystals are illustrated by doped BeAl2O4 and Gd3ScxGa5-xO12 crystals. The role of dislocation arrays in the relaxation of stresses caused by substructural formations of various origins (growth sectors and growth bands) and various inclusions is considered. It is shown that these formations provide ordering of most dislocations in crystals, providing, in turn, the partial relaxation of arising stresses. The purposeful variation of the conditions of growth and microstructure formation in crystals makes it possible to attain preferential dislocation distribution in the crystal bulk and prevent the cracking of crystals in the course of their cooling and subsequent mechanical treatment.
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页码：273 / 280
页数：8
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