Effect of CO2 Addition on Preparation of Diamond Films by Direct-Current Hot-Cathode Plasma Chemical Vapor Deposition Method

被引:7
|
作者
Zhang Chun-Mei [1 ]
Zheng Yan-Bin [2 ]
Jiang Zhi-Gang [2 ]
Lv Xian-Yi [2 ]
Hou Xue [2 ]
Hu Shuang [2 ]
Liu Jun-Wei [2 ]
机构
[1] Jilin Business & Technol Coll, Dept Fdn, Changchun 130062, Peoples R China
[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
关键词
MICROWAVE PLASMA; CVD-DIAMOND; GROWTH; CARBON; GAS; MIXTURE; REACTOR;
D O I
10.1088/0256-307X/27/8/088103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Diamond films are deposited on Mo substrates by dc hot-cathode plasma chemical vapor deposition method using a CH4-H-2-CO2 gas mixture. Adjusting the flow of CO2, we study the relevant influence on surface morphology, grain orientation and crystalline quality of films with scanning electron microscopy, x-ray diffraction, Raman spectroscopy, respectively. The results show that grain orientation of the films has a transition with the increasing CO2 addition, from (100) orientation to (110) orientation and then (111) orientation. The crystalline quality is improved but the growth rate is decreased by raising the flow of CO2. The experimental results are also discussed briefly.
引用
收藏
页数:3
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