Q-switched microchip-lasers with intracavity Raman conversion

被引：0
|
作者：
Voitikov, Sergei V. [1 ]
Demidovich, Aleksander A. [2 ]
Grabtchikov, Aleksander S. [1 ]
Burakevich, Vladimir N. [1 ]
Lisinetskii, Viktor A. [1 ]
Danailov, Miltcho B. [2 ]
Orlovich, Valentin A. [1 ]
机构：
[1] Stepanov Inst Phys, Pr Nezavisimosti 68, Minsk 220072, BELARUS
[2] Laser Lab Sincrotrone Trieste, I-34012 Trieste, Italy
来源：
INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES 2007: ADVANCED LASERS AND SYSTEMS | 2007年 / 6731卷
关键词：
microchip laser; Raman laser; intracavity Raman conversion; passive Q-switch; laser modeling;
D O I：
10.1117/12.752926
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Semi-classical theory of Q-switched microchip - lasers with transient and quasi-stationary intracavity Raman conversion has been developed. Rate wave equations describing generation of Stokes pulses of different orders and their multiwave mixing have been written and discussed in detail. Theoretical results agree well with experiments for passively Q-switched microchip - lasers with intracavity Raman conversion in crystals of Ba(NO3)(2) and CaMoO4. It is shown, that intracavity Raman conversion in microchip - lasers represents a simple and effective method of generation of short Stokes pulses with duration as short as 100 ps, energy in the mu J-range and peak power of up to several tens of kW.
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页数：6
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