Of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

被引：10

作者：

Mamutin, VV ^{[1
]}

Zhmerik, VN ^{[1
]}

Shubina, TV ^{[1
]}

Toropov, AA ^{[1
]}

Lebedev, AV ^{[1
]}

Vekshin, VA ^{[1
]}

Ivanov, SV ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1262149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that GaN films can be grown by molecular-beam epitaxy with plasma activation of the nitrogen by a magnetron rf discharge in a specially constructed coaxial source with capacitive coupling. A growth rate of similar to 0.1 mu m/h is obtained on GaAs and sapphire substrates, and ways are found for optimizing the design of the plasma source in order to increase the growth rate. The electrophysical and luminescence properties of undoped epitaxial films are investigated at temperatures ranging all the way to room temperature. (C) 1998 American Institute of Physics. [S1063-7850(98)02206-X].

引用

页码：467 / 469

页数：3

共 50 条

[1] Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
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P. S. Kop’ev
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[2] Activated nitrogen source with an inverted magnetron geometry for molecular beam epitaxy of GaN
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