High power 121.6 nm radiation source

被引：2
|
作者：
Yan, JX [1 ]
Gupta, MC [1 ]
机构：
[1] Old Dominion Univ, Coll Engn & Technol, Appl Res Ctr, Newport News, VA 23606 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期
关键词：
D O I：
10.1116/1.1627801
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high power 121.6 nm radiation source based on dielectric barrier discharge (DBD) has been developed. Lamp parameters such as gas pressure, discharge tube diameter, electrode area and gap were optimized to maximize the 121.6 nm radiation power.. Higher rf power was coupled to discharge by applying a flexible rf. network, which matched the impedance between the source and discharge. The discharge was optimized by simulation using XOOPIC software to model the lamp. The simulation results were in agreement with our experimental measurements. The stable, high power (8 W) radiation source was achieved and it could be used as a reliable source for lithography and other applications. (C) 2003 American Vacuum Society.
引用
收藏
页码：2839 / 2842
页数：4
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