Minority Carrier Lifetimes and Surface Effects in VLS-Grown Axial p-n Junction Silicon Nanowires

被引：32
|
作者：
Jung, Yeonwoong [1 ]
Vacic, Aleksandar [1 ]
Perea, Daniel E. [2 ]
Picraux, Samuel T. [2 ]
Reed, Mark A. [1 ]
机构：
[1] Yale Univ, Dept Elect Engn & Appl Phys, New Haven, CT 06511 USA
[2] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
来源：
ADVANCED MATERIALS | 2011年 / 23卷 / 37期
关键词：
SOLAR-CELLS; DIODES; RECOMBINATION;
D O I：
10.1002/adma.201101429
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The minority carrier lifetimes of VLS-grown axial p-n junction silicon nanowires are characterized by the reverse recovery transients of electrically injected minority carriers. Nanowire-diameter-dependent lifetimes and various electrical properties indicate the enhanced surface recombination with decreasing diameters, suggesting the significance of surface passivations for effective carrier transport in photovoltaic applications. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：4306 / 4311
页数：6
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