Nonequilibrium heteroepitaxy of silicon carbide on silicon

被引：13
|
作者：
Kukushkin, SA [1 ]
Osipov, AV
Gordeev, SK
Korchagina, SB
机构：
[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia
[2] Cent Mat Res Inst, St Petersburg, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.2121839
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method of silicon carbide (SiC) deposition onto silicon via a nonequilibrium disilicon carbide (Si2C) vapor phase is proposed, theoretically described, and experimentally verified. Estimates obtained using thermochemical calculations show that a sufficiently large number of SiC molecules, which are transported by mobile Si2C species, are obtained using this method on the silicon surface. It is established that homogeneous epitaxial SiC layers can be grown on a Si(111) substrate surface. (C) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：859 / 861
页数：3
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