Dislocation strain as the mechanism of phonon scattering at grain boundaries

被引：121

作者：

Kim, Hyun-Sik ^{[1
,2
,3
]}

Kang, Stephen D. ^{[1
,2
]}

Tang, Yinglu ^{[1
,2
,4
]}

Hanus, Riley ^{[1
]}

Snyder, G. Jeffrey ^{[1
,2
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] CALTECH, Dept Appl Phys & Mat Sci, Pasadena, CA 91125 USA

[3] Samsung Elect, Samsung Adv Inst Technol, Mat Res Ctr, Suwon 443803, South Korea

[4] Swiss Fed Labs Mat Sci & Technol, Uberlandstr 129, CH-8600 Dubendorf, Switzerland

来源：

MATERIALS HORIZONS | 2016年 / 3卷 / 03期

关键词：

LATTICE THERMAL-CONDUCTIVITY; GE-SI ALLOYS; THERMOELECTRIC-MATERIALS; LOW TEMPERATURES; CRYSTAL; METALS; ARRAYS; FILMS; HEAT;

D O I：

10.1039/c5mh00299k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thermal conductivities of polycrystalline thermoelectric materials are satisfactorily calculated by replacing the commonly used Casimir model (freqeuncy-independent) with grain boundary dislocation strain model (frequency-dependent) of Klemens. It is demonstrated that the grain boundaries are better described as a collection of dislocations rather than perfectly scattering interfaces.

引用

页码：234 / 240

页数：7

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