Spin-dependent transport in a dilute two-dimensional GaAs electron gas in an in-plane magnetic field

被引:3
|
作者
Liang, CT [1 ]
Smith, CG
Simmons, MY
Kim, GH
Ritchie, DA
Pepper, M
机构
[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[2] Sungkyunkwan Univ, Dept Elect & Elect Engn, Suwon 440746, South Korea
[3] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源
关键词
spin; electron-electron interactions; spin polarisation;
D O I
10.1016/S1386-9477(02)01051-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report low-temperature magnetoresistivity measurements of a high-quality gated two-dimensional electron gas (2DEG). In the dilute electron density limit, we show evidence for spin polarisation in an in-plane magnetic field. Using a simple model, we estimate the Lande g-factor in this dilute 2DEG to be about 3.32. This enhanced Lande g-factor compared with that of a bulk GaAs 2D electron system (0.44) is ascribed to electron-electron interaction effects at ultra-low electron densities and the fact that over the whole measurement range r(s) does not vary significantly. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:141 / 142
页数:2
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