In-situ electrical resistance measurement of the selenization process in the CuInGa-Se system

被引：11
|
作者：
Liu, Wei [1 ,2 ]
Tian, Jian-Guo [2 ]
He, Qing [1 ]
Li, Feng-Yan [1 ]
Li, Chang-Jian [1 ]
Sun, Yun [1 ]
机构：
[1] Nankai Univ, Key Lab Photoelect Thin Film Devices & Technol Ti, Inst Photoelect Thin Film Device & Technol, Tianjin 300071, Peoples R China
[2] Nankai Univ, Coll Phys, Photon Ctr, Tianjin 300071, Peoples R China
来源：
THIN SOLID FILMS | 2010年 / 519卷 / 01期
关键词：
CuInxGa1-xSe2; In-situ resistance measurement; Selenization; Reaction mechanism; SOLAR-CELL; KINETICS; CUINSE2; FILMS; PRECURSORS; IMPACT;
D O I：
10.1016/j.tsf.2010.08.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work the selenization reactions and reaction paths in CuInxGa1-xSe2 thin films prepared by sputtering and post-selenization process are investigated. The in-situ electrical resistance measurement technique is applied to monitor all the selenization reactions. The crystal structure is determined by X-ray diffraction (XRD) measurement. From the analysis of resistance-temperature curves and the XRD patterns, the phase evolutions of various crystalline and selenization reaction paths have been obtained. From these measurements, the reaction mechanisms and kinetics in the CuInGa-Se system are further understood. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：244 / 250
页数：7
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