Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials

被引：131
|
作者：
Donetsky, Dmitry [1 ]
Belenky, Gregory [1 ,3 ]
Svensson, Stefan [2 ]
Suchalkin, Sergei [1 ,3 ]
机构：
[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
[3] Power Photon Corp, Stony Brook, NY 11790 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期
关键词：
RECOMBINATION RATES; PHOTODETECTORS; GAP;
D O I：
10.1063/1.3476352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Minority carrier lifetime, tau, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg(0.78)Cd(0.22)Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured tau values. The Shockley-Read-Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 mu s for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476352]
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页数：3
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