Induced anisotropy, magnetic domain structure and magnetoimpedance effect in CoFeB amorphous thin films

被引：42
|
作者：
García, D
Muñoz, JL
Kurlyandskaya, G
Vázquez, M
Ali, M
Gibbs, MRJ
机构：
[1] UCM, RENFE, Inst Magnetismo Aplicado, Madrid 28230, Spain
[2] CSIC, Inst Ciencia Mat, Madrid 28230, Spain
[3] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England
[4] Russian Acad Sci, Inst Met Phys UD, Ekaterinburg 620219, Russia
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 191卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
magnetic anisotropy; giant magnetoimpedance effect; magnetic domains; RF sputtering; thin films;
D O I：
10.1016/S0304-8853(98)00262-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CoFeB amorphous thin films have been prepared by radio frequency magnetron sputtering. The objective of the work has been to obtain very soft thin films, and to correlate their domain structure with the induced anisotropy and giant magneto-impedance (GMI) features. Tailored anisotropies were induced by either growth under stress, or by postdeposition annealing in the presence of a magnetic field. In certain cases these induced anisotropies give rise to significant GMI effect at a frequency, 5 MHz, relatively low for thin films. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：339 / 344
页数：6
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