Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)

Ga1-yInyNxAs1-x with doping densities between 10(17) and 10(19) cm(-3) was grown lattice matched on (100) GaAs by metalorganic vapor-phase epitaxy. Si or Te and Zn served as donors and acceptors, respectively. The magnetoresistance (MR) was measured between 1.6 and 280 K in magnetic fields up to 10 T. The MR of p-type Ga1-yInyNxAs1-x is typical for highly doped III-V semiconductors showing parabolic behavior at all temperatures with a small negative contribution due to weak localization at low fields and low temperatures. In contrast, n-type Ga1-yInyNxAs1-x exhibits a much stronger negative contribution to the MR. For some samples this negative contribution persists up to 280 K and H-min>10 T. The N-induced conduction band structure changes lead to a strong enhancement of weak localization effects in the electron transport of Ga1-yInyNxAs1-x. (C) 2004 American Institute of Physics.