Electroluminescence from amorphous GIZO/p-GaN heterojunction light-emitting diodes

被引：0
|
作者：
Jeong, Seonghoon [1 ]
Ahn, Kwang-Soon [2 ]
Kim, Hyunsoo [1 ]
机构：
[1] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 54896, South Korea
[2] Yeungam Univ, Sch Chem Engn, Gyongsan 38541, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 113卷 / 113期
关键词：
Light emitting diode; Amorphous; Gallium-indium-zinc oxde; Heterojunction; ROOM-TEMPERATURE; ZNO; FABRICATION; EMISSION; ARRAYS;
D O I：
10.1016/j.mssp.2020.105053
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The light emissions were observed at around 410 nm (originating from p-GaN) and similar to 450-800 nm (originating from interfacial layer and/or from a-GIZO), which were particularly pronounced under reverse bias condition. As a result, the standard white light with the chromaticity coordinate of (0.2899, 0.3034) was obtained.
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页数：5
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