High-temperature Properties of Schottky Diodes Made of Silicon Carbide

被引：0
|
作者：
Gorecki, Krzysztof [1 ]
Bisewski, Damian [1 ]
Zarebski, Janusz [1 ]
Kisiel, Ryszard [2 ]
Mysliwiec, Marcin [2 ]
机构：
[1] Gdynia Maritime Univ, Dept Marine Elect, Gdynia, Poland
[2] Warsaw Univ Technol, Inst Microelect & Optoelect, Warsaw, Poland
来源：
PROCEEDINGS OF THE 23RD INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2016) | 2016年
关键词：
SiC Schottky diodes; thermal phenomena; thermal parameters; electronic cooling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper refers to properties of silicon carbide Schottky diodes at high values of their internal temperature. The investigated diode was elaborated at Warsaw University of Technology. Characteristics of this diode were measured at different cooling conditions in wide range of dissipated power. At each operating point the value of the internal temperature of the investigated diode was measured with the use of the impulse electrical method. On the basis of the obtained results of measurements thermal properties of the considered diode were discussed, as well as the possibility of using such a construction of the diode at very high values of its internal temperature (up to 500 degrees C) was considered.
引用
收藏
页码：382 / 386
页数：5
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