Excitonic effect in black phosphorus oxides

被引:1
|
作者
Chi, Longxing [1 ,2 ]
Lee, Ming-Hsien [3 ]
Chu, Ta-Ya [1 ]
Tao, Ye [1 ]
机构
[1] Natl Res Council Canada, Adv Elect & Photon Res Ctr, Ottawa, ON K1A 0R6, Canada
[2] Univ Toronto, Dept Mat Sci & Engn, 184 Coll St, Toronto, ON M5S 3E4, Canada
[3] Tamkang Univ, Dept Phys, New Taipei 25137, Taiwan
关键词
excitonic effect; exciton binding energy; black phosphorus oxides; BANDGAP; OXIDATION; SURFACE;
D O I
10.1088/2053-1583/ac321b
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) few-layer black phosphorus (BP) with extraordinary electronic and optical properties is an excellent candidate for optoelectronic applications. However, rapid surface oxidation under ambient environment significantly restricts its practicability. Here, we investigate excitonic effect in few-layer BP oxides via first-principle calculation and effective mass approximation. Influence of layer numbers and degree of oxidation on exciton binding energy (EBE) is discussed in detail for the first time. It is found that EBE in BP oxides decreases exponentially with increasing sample thickness and becomes almost oxygen independent over six layers with values similar to that of pristine BP. Instead, oxidation alters excitation probability of excitons in few-layer BP via a direct/indirect bandgap transition.
引用
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页数:8
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