TEOS/O2 gas pressure as a chemical composition adjuster of plasma deposited SiO2 thin films

被引：0
|
作者：
Panou, A [1 ]
Voulgaris, C [1 ]
Amanatides, E [1 ]
Mataras, D [1 ]
Rapakoulias, DE [1 ]
机构：
[1] Univ Patras, Plasma Technol Lab, Dept Chem Engn, Patras 26500, Greece
来源：
HIGH TEMPERATURE MATERIAL PROCESSES | 2005年 / 9卷 / 02期
关键词：
gas pressure; FTK; PECVD; silicon oxide; TEOS;
D O I：
10.1615/HighTempMatProc.v9.i2.100
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the total gas pressure on the electrical properties of TEOS/O-2 RF discharges and on the SiOxCyHz deposition rate and chemical composition was investigated. The experiments were carried out under well controlled electrical conditions and under constant TEOS partial pressure in order to isolate as much as possible the effect of the total pressure on the deposition process. The increase of pressure by a factor of two under constant discharge power was found to significantly enhance the film growth by a factor of six. At the same time the content of -OH was increased and the Si-C content was decreased indicating the very important role of the total gas pressure on the complete removal of the hydroxyl groups and the film stability.
引用
收藏
页码：279 / 285
页数：7
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