A Very High Q-factor Inductor using MEMS Technology

被引：1
|
作者：
Khalid, N. [1 ]
Shah, K. [1 ]
Singh, J. [1 ]
Le, H. P. [1 ]
Devlin, J. [1 ]
Sauli, Z. [2 ]
机构：
[1] La Trobe Univ, Bundoora, Vic 3083, Australia
[2] Univ Malaysia Perlis, Sch Microelect Engn, Kangar, Malaysia
来源：
NANOSENSORS, BIOSENSORS, AND INFO-TECH SENSORS AND SYSTEMS 2010 | 2010年 / 7646卷
关键词：
Micro-electro-mechanical System (MEMS); high Quality (Q) factor; inductor; high radio frequency (RF); Silicon-on Sapphire (SOS); SILICON; DESIGN;
D O I：
10.1117/12.848686
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents the design and optimisation of three types of high Quality (Q) factor air suspended inductors (symmetric (a), symmetric (b) and circular), using micro-electro-mechanical systems (MEMS) technology, for 10GHz to 20GHz frequency band. The geometrical parameters of inductor topology, such as outer diameter, the width of metal traces, the thickness of the metal and the air gap, are used as design variables and their effects on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on high resistivity Silicon-on-Sapphire (SOS) substrate in order to reduce the substrate loss and improve the Q factor. Results indicate that the proposed inductor topology (symmetric (a)) has highest Q-factor with peak Q-factor of 192 at 12GHz for a 1.13nH inductance.
引用
收藏
页数：12
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