Low-temperature RTP for source/drain engineering

被引：0
|
作者：
Wiess, J [1 ]
Paul, S
Schmid, P
Lerch, W
Timans, PJ
机构：
[1] Mattson Thermal Prod GmbH, Dornstadt, Germany
[2] Mattson Technol, RTP PRod Business Unit, Fremont, CA USA
来源：
SOLID STATE TECHNOLOGY | 2005年 / 48卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Relatively low-temperature rapid thermal offers some new alternatives for addressing the critical question to reduce source-drain parasitic resistance through ultralow thermal budget approaches. Solid-phase epitaxial regrowth and nickel silicide as a contact material are examined as potential solutions to reduce resistance with device scaling beyond the 65nm node.
引用
收藏
页码：37 / +
页数：4
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