Cavity less GaAs CW sub-THz TUNNETT Oscillators

被引：0
|
作者：
Sundararajan, B. [1 ]
Endo, Kazuomi [1 ]
Tanabe, Tadao [1 ]
Oyama, Yutaka [1 ]
Plotka, Piotr [2 ]
Nishizawa, Jun-ichi [2 ]
机构：
[1] Tohoku Univ, Grad Sch Eng, Dept Mat Sci, Aramaki Aza Aoba 6-6-11-1020, Sendai, Miyagi 9808579, Japan
[2] Aramaki Aza Aoba, Sendai, Miyagi 9808579, Japan
来源：
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年
关键词：
GROWTH;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Tunnel injection transit time diodes (TUNNTETT) with 14 nm tunneling layer thicknesses were fabricated with molecular layer epitaxy, and planar patch antennas were designed for 200GHz and 300GHz emission. From the fabricated patch antenna coupled with TUNNETT oscillator, the obtained oscillation frequency was ranging in 177- 235 GHz at room temperature with bias current of 300-550 mA (duty 5 %)
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页码：386 / +
页数：2
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