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- [3] Epitaxial growth of GeSn layers on (001), (110), and (111) Si and Ge substrates SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06): : 793 - 799
- [4] CHARACTERIZATION OF EPITAXIAL GE FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION ON GE(111) AND GAAS(111) SUBSTRATES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1130 - 1135
- [8] Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (02):
- [9] 3C-SiC:Ge alloys grown on Si(111) substrates by SSMBE E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 347 - 350
- [10] ARSENIC DOPING OF EPITAXIAL GE GROWN ON GE AND GAAS SUBSTRATES REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (05): : 299 - 303