Perpendicular magnetization of CoFeB on single-crystal MgO

被引：35

作者：

Lee, Kangho ^{[1
]}

Sapan, Jonathan J. ^{[2
]}

Kang, Seung H. ^{[1
]}

Fullerton, Eric E. ^{[2
]}

机构：

[1] Qualcomm Inc, Adv Technol, San Diego, CA 92121 USA

[2] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 12期

基金：

美国国家科学基金会;

关键词：

TUNNEL-JUNCTION; ANISOTROPY;

D O I：

10.1063/1.3592986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CoFeB films deposited on single-crystal MgO(100) exhibit significantly reduced out-of-plane demagnetization fields after magnetic annealing in the film plane, resulting in perpendicular magnetization for a 15 angstrom CoFeB film. The perpendicular magnetic anisotropy can be enhanced further by inserting a thin Ru capping layer on top of CoFeB, resulting in perpendicular magnetization in even thicker CoFeB films. (c) 2011 American Institute of Physics. [doi:10.1063/1.3592986]

引用

页数：3

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