Simulation of a Ridge-Type Semiconductor Laser with Transversal Diffraction Gratings

被引:0
|
作者
Hirose, Tatsuhiro [1 ]
Numai, Takahiro [1 ]
机构
[1] Ritsumeikan Univ, Dept Elect & Elect Engn, 1-1-1 Noji Higashi, Kusatsu, Shiga 528577, Japan
来源
2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD) | 2021年
关键词
POWER; IMPROVEMENT; LAYERS;
D O I
10.1109/NUSOD52207.2021.9541492
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on improvement of stability of the fundamental horizontal transverse mode in a ridge-type semiconductor laser by incorporating transversal diffraction gratings. Kinks do not appear in current versus light-output curves by appropriately designing the number of the grating periods when the mesa width is 5 mu m.
引用
收藏
页码:91 / 92
页数:2
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