Negative Magnetoresistance in the n-InSb/YIG Structure

被引：0
|
作者：
Nikulin, Yu, V [1 ,2 ]
Kozhevnikov, A., V [1 ]
Khivintsev, Yu, V [1 ,2 ]
Seleznev, M. E. [1 ,2 ]
Filimonov, Yu A. [1 ,2 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia
[2] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
来源：
PHYSICS OF THE SOLID STATE | 2021年 / 63卷 / 10期
基金：
俄罗斯基础研究基金会;
关键词：
indium antimonide; negative magnetoresistance; YIG; THIN-FILMS; WHISKERS;
D O I：
10.1134/S1063783421090286
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, it is shown that in the n-InSb/YIG/GGG (YIG is yttrium iron garnet, GGG is gadolinium gallium garnet) structure, when the geometry of magnetization is tangential to the substrate plane (H < 10 kOe) and temperature T approximate to 300 K, the effect of negative magnetoresistance of about 1% appears, whereas in the n-InSb/GGG structure with the same geometry of magnetization, the magnetoresistance is positive (increase in electrical resistance in the magnetic field). The effect of negative magnetoresistance in the InSb/YIG/GGG structure is stipulated by the effect of the YIG magnetization on the conduction electrons of InSb (proximity effect) with the impact value determined by the YIG magnetization value and the InSb film parameters.
引用
收藏
页码：1496 / 1500
页数：5
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