Field-induced increase in the population of long-lived excited impurity states in silicon

被引：0
|
作者：
Musaev, A. M. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys, Dagestan Sci Ctr, Makhachkala, Dagestan, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 11期
关键词：
D O I：
10.1134/S1063785007110272
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The kinetics of terahertz emission from n-type silicon has been studied for a crystal uniaxially deformed at 4.2 K in a strong electric field. It is established that the emission intensity under these conditions grows as a result of an increase in the population of long-lived excited impurity states in the electric field. This increase in the population of impurity levels is related to hot electron trapping via a combined mechanism.
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页码：983 / 986
页数：4
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