Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential

被引:16
|
作者
Altuntas, I [1 ]
Dakhlaoui, H. [2 ,3 ]
Mora-Ramos, M. E. [4 ]
Ungan, F. [5 ]
机构
[1] Sivas Cumhuriyet Univ, Fac Engn, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
[2] Imam Abdulrahman Bin Faisal Univ, Coll Sci Dammam, Basic & Appl Sci Res Ctr BASRC, Nanomat Technol Unit, POB 1982, Dammam 31441, Saudi Arabia
[3] Imam Abdulrahman Bin Faisal Univ, Coll Sci Girls, Dept Phys, Dammam, Saudi Arabia
[4] Univ Autonoma Estado Morelos, Fac Ciencias, Ave Univ 1001, Cuernavaca 62209, Morelos, Mexico
[5] Sivas Cumhuriyet Univ, Fac Sci, Dept Phys, TR-58140 Sivas, Turkey
来源
EUROPEAN PHYSICAL JOURNAL PLUS | 2021年 / 136卷 / 11期
关键词
2ND-HARMONIC GENERATION; HYDROSTATIC-PRESSURE; ABSORPTION; RECTIFICATION; ENERGY;
D O I
10.1140/epjp/s13360-021-02180-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We are presenting a theoretical investigation on the effects of applied electric, magnetic, and non-resonant intense laser field on the coefficients of intersubband linear, third-order nonlinear, and total optical absorption and of relative refractive index change in GaAs/GaAlAs quantum wells with exponentially confining potential. It also includes the study of the impact of adjustable potential parameters. The energy states of conduction band electrons in the structure are calculated by using the effective mass and envelope function approximations. With regard to the optical response, it is found that with the strengthening of magnetic field, the resonant peak positions shift to lower energies and their magnitudes decrease. Increasing in the values of adjustable potential parameters as well as of the static electric and laser intensities causes the peak positions to shift toward higher energies and their magnitudes to augment. These results show that the optical properties of the system can be adjusted according to the purpose, by changing the magnitude of applied external fields and structure parameters.
引用
收藏
页数:11
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