Characterization of Mo/Si multilayer growth on stepped topographies

被引：3
|
作者：
van den Boogaard, A. J. R. [1 ]
Louis, E. [1 ]
Zoethout, E. [1 ]
Goldberg, K. A. [2 ]
Bijkerk, F. [1 ,3 ]
机构：
[1] FOM Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[3] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 05期
关键词：
D O I：
10.1116/1.3628640
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the step-edge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3628640]
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页数：6
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