Room-temperature spin injection from Fe into GaAs -: art. no. 016601

被引:648
|
作者
Zhu, HJ [1 ]
Ramsteiner, M [1 ]
Kostial, H [1 ]
Wassermeier, M [1 ]
Schönherr, HP [1 ]
Ploog, KH [1 ]
机构
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
关键词
D O I
10.1103/PhysRevLett.87.016601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
引用
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页数:4
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