Impact of floating-body-induced parasitic bipolar transistor on hot-carrier effects in 0.1 mu m N-channel SOI MOSFETs

Hot-carrier effects (HCE) induced by the parasitic bipolar transistor (PET) action are thoroughly investigated in 0.1 mu m N-channel SOI MOSFETs for a wide temperature range. A multi-stage time-dependent law is highlighted for the maximal transconductance degradations in the cases of both room (RT) and low temperatures (LT). On the other hand, an attenuation of the threshold voltage is observed for intermediate values of stress time in the case of high stress drain biases. At LT, an improvement of the device aging can be obtained in the low Vd range because of the significant reduction of the leakage current in the PET regime. However, in the case of higher Vd, since the strong leakage current cannot be suppressed at LT, the hot-carrier-induced degradation is larger than that obtained at room temperature.