Contact Pressure Distribution of Chemical Mechanical Polishing Based on Bionic Polishing Pad

被引:0
|
作者
Wang, Jun [1 ]
Xing, Xue-Ling [1 ]
Lu, Yu-Shan [1 ]
Zhang, Liao-Yuan [1 ]
机构
[1] Shenyang Ligong Univ, Sch Mech Engn, Shenyang 110159, Peoples R China
关键词
Chemical Mechanical Polishing; Winkler foundation; Phyllotaxis; Wafer; Surface texture; STRESS;
D O I
10.1117/12.883014
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
In order to improve the uniformity of the contact pressure distribution of chemical mechanical polishing, based on the Winkler foundation principle of mechanics and phyllotaxis theory of biology, a kind of stannum fixed abrasive pad with bionic surface texture has been designed, and the contact mechanism and ANSYS model have been established. By the calculating and analysis of contact pressure distribution on polishing wafer, the contact pressure distribution and the effects of the geometrical and physical parameters polishing pad on the contact pressure distributions have been obtained. The results show that the horizontal effect of the polishing pad is very small, the uniformity of contact pressure distribution can be improved, and there are the phyllotactic parameters which make the contact pressure distribution more uniformity.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Analysis on the Contact Pressure Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern
    Lv, Y. S.
    Li, N.
    Wang, J.
    Zhang, T.
    Duan, M.
    Xing, X. L.
    DIGITAL DESIGN AND MANUFACTURING TECHNOLOGY II, 2011, 215 : 217 - 222
  • [2] Material Removal Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern
    Lu, Yushan
    Wang, Jun
    Li, Nan
    Zhang, Tian
    Duan, Min
    Xing, Xueling
    APPLICATION OF DIAMOND AND RELATED MATERIALS, 2011, 175 : 87 - 92
  • [3] Polishing Pad in Chemical Mechanical Polishing
    Cao W.
    Deng Z.-H.
    Li Z.-Y.
    Ge J.-M.
    Surface Technology, 2022, 51 (07): : 27 - 41
  • [4] Modeling of Polishing Pad Wear in Chemical Mechanical Polishing
    Li, Mao
    Zhu, Yongwei
    Li, Jun
    Lin, Kui
    MACHINING AND ADVANCED MANUFACTURING TECHNOLOGY X, 2010, 431-432 : 318 - 321
  • [5] Contact Behavior and Chemical Mechanical Polishing (CMP) Performance of Hole-Type Polishing Pad
    Kim, Hong Jin
    Choi, Jae Kwang
    Hong, Myung Ki
    Lee, Kuntack
    Ko, Yongsun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2012, 1 (04) : P204 - P209
  • [6] Polishing Characteristics of Hydrophilic Pad in Chemical Mechanical Polishing Process
    Tsai, Ming-Yi
    Chen, Chiou-Yuan
    He, Ying-Rong
    MATERIALS AND MANUFACTURING PROCESSES, 2012, 27 (06) : 650 - 657
  • [7] Pad conditioning in chemical mechanical polishing
    Hooper, BJ
    Byrne, G
    Galligan, S
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 123 (01) : 107 - 113
  • [8] Analysis of Wafer Edge Pressure Distribution using Intelligent Pad in Chemical Mechanical Polishing
    Lee, Changsuk
    Park, Jaehong
    Wang, Han
    Jeong, Haedo
    2014 INTERNATIONAL CONFERENCE ON PLANARIZATION/CMP TECHNOLOGY (ICPT), 2014, : 92 - 95
  • [9] Analysis of the Polishing Slurry Flow of Chemical Mechanical Polishing by Polishing Pad with Phyllotactic Pattern
    Lv Yushan
    Zhang Tian
    Wang Jun
    Li Nan
    Duan Min
    Xing Xue-Ling
    FOURTH INTERNATIONAL SEMINAR ON MODERN CUTTING AND MEASUREMENT ENGINEERING, 2011, 7997
  • [10] Impact of Pad-Wafer Contact Area in Chemical Mechanical Polishing
    Yeruva, Suresh B.
    Park, Chang-Won
    Rabinovich, Yakov I.
    Moudgil, Brij M.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (10) : D408 - D412