Complicated magnetic structure and its strong correlation with the anomalous Hall effect in Mn3Sn

被引：24
|
作者：
Song, Yuzhu [1 ,2 ]
Hao, Yiqing [3 ,4 ]
Wang, Shaobo [5 ]
Zhang, Ji [6 ]
Huang, Qingzhen [7 ]
Xing, Xianran [1 ,8 ]
Chen, Jun [1 ,2 ]
机构：
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Math & Phys, Beijing 100083, Peoples R China
[3] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[5] Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
[6] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China
[7] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
[8] Univ Sci & Technol Beijing, Inst Solid State Chem, Beijing 100083, Peoples R China
来源：
PHYSICAL REVIEW B | 2020年 / 101卷 / 14期
基金：
中国国家自然科学基金;
关键词：
WEAK FERROMAGNETISM; SPIN STRUCTURE; POLARIZATION; NEUTRON;
D O I：
10.1103/PhysRevB.101.144422
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The large anomalous Hall effect (AHE) has recently been found in noncollinear antiferromagnet Mn3Sn. However, the complex magnetic structure and its correlation with the AHE remain unclear. Here we investigate the magnetic structure of Mn3Sn completely by means of both the temperature and magnetic field dependence of neutron power diffraction. This study establishes the possible incommensurate magnetic structure models and extracts the temperature evolution of the magnetic moment of the Mn atom over the whole temperature range for Mn3Sn. The large AHE of polycrystalline bulk Mn3Sn is measured in detail. By comparing the temperature dependence of the spontaneous component of the AHE and the magnetic moment, direct experimental evidence reveals that the triangular antiferromagnetic ordered moment of the Mn atom controls the change in the AHE of Mn3Sn. This study provides the possibility to control the AHE of functional materials via changing the magnetic structure.
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页数：7
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