Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

被引：10
|
作者：
Morel, A [1 ]
Lefebvre, P [1 ]
Taliercio, T [1 ]
Gallart, M [1 ]
Gil, B [1 ]
Mathieu, H [1 ]
机构：
[1] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier 5, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期
关键词：
donor binding energies; GaN/AlGaN quantum wells; internal electric fields;
D O I：
10.1016/S0921-5107(00)00772-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present calculations of the donor binding energy in GaN-AlxGa1-xN single quantum wells, including the effects of internal electric fields induced by spontaneous and piezoelectric polarizations. The variation of this energy versus position of the donor ion in the structure is of several tens of meV, i.e. much larger than for familiar quantum well systems. Realistic cases including the donor in the well and in the surrounding barriers are considered. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：221 / 223
页数：3
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