Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer

被引：15

作者：

Su, YK ^{[1
]}

Wei, SC

Wang, RL

Chang, SJ

Ko, CH

Kuan, TM

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[3] Natl Kaohsiung Inst Marine Technol, Dept Microelect Engn, Kaohsiung, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 10期

关键词：

carrier injectin layer; flicker noise; HFET; Si-doped AlGaN;

D O I：

10.1109/LED.2003.817869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure field effect transistors (HFETs) with and without Si-doped AlGaN layer were fabricated and investigated. HFETs with the Si-doped AlGaN carrier-injection layer show better dc performance, and the transconductance is 150 mS/mm. However, the HFETs with Si-doped AlGaN layer present the deviation from the 1/f noise at low frequency. The Lorentz shape was observed in the noise spectrum. It suggests that traps might be more pronounced in this kind of structure. Therefore, the dc characteristics of HFETs. can be improved by the insertion of Si-doped AlGaN layer, but it can result in more low-frequency noise with the carrier-injection layer.

引用

页码：622 / 624

页数：3

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