Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond

The Monte Carlo method is used to simulate the hole transport in silicon and diamond. A simple model based on one nonparabolic band (the heavy hole band) without iteration has been used. The temperature dependence of the density-of-states effective mass (accounting for nonparabolicity) has been taken into account in calculating the scattering rates. Carrier dynamics have been calculated using the density-of-states effective mass at room temperature, which does not vary considerably from its value at high temperature. The resulting model gives reasonable accuracy above room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.